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RU20C4C6 - Complementary Advanced Power MOSFET

Description

D2 S1 D1 G2 S2 G1 SOT23-6 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted

Features

  • N-Channel 20V/4A, RDS (ON) =30mΩ(Typ. ) @ VGS=4.5V RDS (ON) =38mΩ(Typ. ) @ VGS=2.5V.
  • P-Channel -20V/-2.5A, RDS (ON) =70mΩ (Typ. ) @ VGS=-4.5V RDS (ON) =100mΩ (Typ. ) @ VGS=-2.5V.
  • Reliable and Rugged.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU20C4C6
Manufacturer Ruichips
File Size 379.69 KB
Description Complementary Advanced Power MOSFET
Datasheet download datasheet RU20C4C6 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU20C4C6 Complementary Advanced Power MOSFET Features • N-Channel 20V/4A, RDS (ON) =30mΩ(Typ.) @ VGS=4.5V RDS (ON) =38mΩ(Typ.) @ VGS=2.5V • P-Channel -20V/-2.5A, RDS (ON) =70mΩ (Typ.) @ VGS=-4.5V RDS (ON) =100mΩ (Typ.) @ VGS=-2.5V • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Load Switch Pin Description D2 S1 D1 G2 S2 G1 SOT23-6 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pulse Drain Current Tested ID② Continuous Drain Current(VGS=±4.
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