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RU205B - N-Channel Advanced Power MOSFET

Description

SOT-23 Applications Load Switch PWM Applications Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Ran

Features

  • 20V/5A, RDS (ON) =30mΩ (Typ. ) @ VGS=4.5V RDS (ON) =38mΩ (Typ. ) @ VGS=2.5V.
  • Low RDS (ON).
  • Super High Dense Cell Design.
  • Reliable and Rugged.
  • Lead Free and Green Available Pin.

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Datasheet Details

Part number RU205B
Manufacturer Ruichips
File Size 259.35 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU205B Datasheet

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Full PDF Text Transcription

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RU205B N-Channel Advanced Power MOSFET MOSFET Features • 20V/5A, RDS (ON) =30mΩ (Typ.) @ VGS=4.5V RDS (ON) =38mΩ (Typ.) @ VGS=2.5V • Low RDS (ON) • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Available Pin Description SOT-23 Applications • Load Switch • PWM Applications Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TA=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested TA=25°C ID PD ② RθJA Continuous Drain Current(VGS=4.
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