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RU1Z200Q - N-Channel Advanced Power MOSFET

Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μ

Features

  • 150V/200A, RDS (ON) =5.5mΩ(Typ. )@VGS=10V.
  • Ultra Low On-Resistance.
  • Exceptional dv/dt capability.
  • Fast Switching and Fully Avalanche Rated.
  • 100% avalanche tested.
  • 175°C Operating Temperature.
  • Lead Free and Green Devices Available (RoHS Compliant).

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Datasheet Details

Part number RU1Z200Q
Manufacturer Ruichips
File Size 398.68 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet RU1Z200Q Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RU1Z200Q N-Channel Advanced Power MOSFET Features • 150V/200A, RDS (ON) =5.5mΩ(Typ.
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