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S8450MG - Infrared Laser diode

Datasheet Summary

Features

  • Lasing Mode Structure: multi mode.
  • Peak Wavelength : typ. 840 nm.
  • Optical Ouput Power: 50 mW.
  • Package: 5.6 mm Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 n. c. Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr TC Tstg Value 50 2 -10 … +40 -15 … +85 Unit mW V °C °C Specifications (TC=20°C) Item Optical Specifications CW Outp.

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Datasheet Details

Part number S8450MG
Manufacturer Roithner
File Size 293.99 KB
Description Infrared Laser diode
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S8450MG TECHNICAL DATA Infrared Laser Diode Features • Lasing Mode Structure: multi mode • Peak Wavelength : typ. 840 nm • Optical Ouput Power: 50 mW • Package: 5.6 mm Electrical Connection Pin Configuration PIN Function 1 LD Cathode 2 LD Anode 3 n.c. Bottom View Absolute Maximum Ratings (TC=20°C) Item CW Output Power LD Reverse Voltage Operating Case Temperature Storage Temperature Symbol PO Vr TC Tstg Value 50 2 -10 … +40 -15 … +85 Unit mW V °C °C Specifications (TC=20°C) Item Optical Specifications CW Output Power Center Wavelength FWHM Beam Divergence Electrical Specifications Threshold Current Operating Current Slope Efficiency Operating Voltage Symbol PO λC θ║ θ┴ Ith Iop η Uop Min. 830 10 22 0.7 1.5 Typ. 50 840 15 30 28 85 0.9 1.8 Max. 850 20 38 35 110 2.
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