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RLT808-10MG - Laser Diode

Features

  • Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 10 -10 to +50 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 808 nm (Typ. ) Optical Power : 10 mW CW Threshold Current : 30 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ).

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Datasheet Details

Part number RLT808-10MG
Manufacturer Roithner
File Size 167.89 KB
Description Laser Diode
Datasheet download datasheet RLT808-10MG Datasheet

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Full PDF Text Transcription

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RLT808-10MG ABSOLUTE MAXIMUM RATINGS ( Tc=25 oC ) DESCRIPTION Features • • • • • Optical Power (mW) Operation Temperature (oC) Storage Temperature (oC) LD Reverse Voltage (V) PD Reverse Voltage (V) SYMBOL Po Top Tstg VLDR VPDR RATED VALUE 10 -10 to +50 -40 to +85 2 30 Index Guided MQW Structure Wavelength : 808 nm (Typ.) Optical Power : 10 mW CW Threshold Current : 30 mA ( Typ. ) Package Style : TO-18 (5.6 mmØ) OPTICAL AND ELECTRICAL CHARACTERISTICS ( Tc=25 oC ) DESCRIPTION Lasing Wavelength (nm) Threshold Current (mA) Operating Current (mA) Operating Voltage (V) Monitor Current (mA) SYMBOL λp Ith Iop Vop Im η θ⎪⎢ θ⊥ As MIN. 803 20 30 1.8 0.1 0.5 8 25 * TYPICAL 808 30 50 2.0 0.4 0.7 10 30 11 MAX. 815 50 70 2.5 0.9 0.
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