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RLT760-10G
v 1.1 04.08.2013
Description
RLT760-10G is a Laser Diode emitting at typical 760 nm with rated output power of 10 mW CW at room temperature. The 9 mm TO package includes a cap and flat window, and contains a built in monitor PD.
Maximum Ratings
Parameter Optical Output Power Operating Temperature Storage Temperature Soldering Temperature
Symbol
PO TCASE TSTG TSOLD
Min.
-20 -40
Values
Max. 10 +60 +85 180
Unit
mW °C °C °C
Specifications
Parameter
Central Wavelength Optical Output Power Emitting Area Threshold Current Forward Current Forward Voltage Beam Divergence Beam Divergence Spectral Width (FWHM) Static Alignment Positional Accuracy Mode Structure Slope Efficiency Monitor Current
Symbol
λC PO WxH ITH IOP UOP ӨII Ө┴ Δλ Δa II x ΔX, ΔY, ΔZ
η IM
Min. 755
-
30 150 1.
RLT760-10G Datasheet
