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Transistors
2.5V Drive Pch MOS FET
RTR025PP0022FRA
RTRR0T2R50P2052PF0R2A
AEC-Q101 Qualified
zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3).
zApplication Power switching, DC / DC converter.
zStructure Silicon P-channel MOS FET
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces) RRTTRR002255PP0022FRA
Taping TL
3000
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Range of Storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board
Symbol
VDSS VGSS
ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits −20 ±12 ±2.5 ±10 −0.8 −3.