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RSX501L-20 - DIODE

Key Features

  • 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. 2.0 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 5 5 7 4.5±0.2 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 zStructure zConstruction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date z Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.8MAX zAbsolute maximum ratings (Ta=25°C) Param eter Revers e voltage (repetitive peak) Revers e voltage (DC) Avera.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com RSX501L-20 Diodes Schottky barrier diode RSX501L-20 zApplications General rectification z Dimensions (Unit : mm) z Land size figure (Unit : mm) 2.0 zFeatures 1) Small power mold type. (PMDS) 2) Low VF, Low IR. 3) High reliability. 2.0 2.6±0.2 ① ② 0.1±0.02 　　　 0.1 5.0±0.3 3 5 5 7 4.5±0.2 1.2±0.3 PMDS 1.5±0.2 2.0±0.2 zStructure zConstruction Silicon epitaxial planar ROHM : PMDS JEDEC : SOD-106 ① ② Manufacture Date z Taping specifications (Unit : mm) 2.0±0.05 4.0±0.1 φ1.55±0.05 1.75±0.1 0.3 5.5±0.05 φ1.55 2.9±0.1 4.0±0.1 2.