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PRODUCTS SOP8
TYPE
RSH140N03
1.TYPE
RSH140N03
2.STRUCTURE
SILICON N-CHANNEL MOS FET
3.APPLICATIONS SWITCHING
4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃]
DRAIN-SOURCE VOLTAGE
VDSS 30V
PAGE 1/4
GATE-SOURCE VOLTAGE
VGSS ‚20V
DRAIN CURRENT CONTINUOUS ID
‚14A
PULSED
IDP ‚56A PW 10μs , Duty cycle 1%
SOURCE CURRENT CONTINUOUS IS (BODY DIODE)
1.6A
PULSED
ISP 6.4A PW 10μs , Duty cycle 1%
POWER DISSIPATION CHANNEL TEMPERATURE
PD 2.0W MOUNTED ON A CERAMIC BOARD
Tch 150℃
RANGE OF STORAGE TEMPERATURE Tstg -55~150℃
5.THERMAL RESISTANCE CHANNEL TO AMBIENT
Rth(ch-a) 62.5℃/W MOUNTED ON A CERAMIC BOARD
DESIGN
CHECK APPROVAL DATE: 23/OCT/2009 SPECIFICATION No. Q03080-RSH140N03
TSZ22111･04･002
REV.: 0
PRODUCTS SOP8
TYPE
RSH140N03
PAGE 2/4
6.
RSH140N03 Datasheet
