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4V Drive Nch MOSFET
RSH090N03
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
Application Power switching, DC / DC converter.
Packaging specifications
Package
Type
Code Basic ordering unit (pieces)
RSH090N03
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Source Current (Body Diode)
Continuous Pulsed
Total Power Dissipation
Channel Temperature
Storage Temperature
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Symbol
VDSS
VGSS
ID IDP ∗1
Is Isp ∗1 PD ∗2
Tch
Tstg
Limits 30 20 ±9.0 ±36 1.