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RQ7E055AT
Pch -30V -5.5A Middle Power MOSFET
VDSS RDS(on)(Max.)
ID PD
-30V 27mΩ ±5.5A 1.5W
lFeatures
1) Low on - resistance. 2) Small Surface Mount Package (TSMT8). 3) Pb-free lead plating ; RoHS compliant
lOutline
TSMT8
lInner circuit
Datasheet
lApplication Switching
lAbsolute maximum ratings (Ta = 25°C) Parameter
Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche current Power dissipation Junction temperature Range of storage temperature
lPackaging specifications
Packing
Reel size (mm) Type Tape width (mm)
Basic ordering unit (pcs) Taping code Marking
Embossed Tape 180 8 3000 TR JQ
Symbol
VDSS ID*1 ID,pulse*2 VGSS EAS*3 IAS*3 PD*4 Tj Tstg
Value -30 ±5.5 ±18 ±20 22.