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RF2001T4S - Fast Recovery Diode

Key Features

  • bility. (TO-220) 10.0±0.3 　　　 0.1 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 for.
  • Structure (1) (2) (3) 2) Low noise. 3) Very fast switching . d.
  • Construction mendigens Silicon epitaxial planar 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) ROHM : TO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.5 ecom Des.
  • Absolute maximum ratings (Ta=25C) w Parameter Symbol Limits Unit Reverse voltage (repetitive peak) R e Reverse voltage (DC) Average rectified forw.

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Datasheet Details

Part number RF2001T4S
Manufacturer ROHM
File Size 380.57 KB
Description Fast Recovery Diode
Datasheet download datasheet RF2001T4S Datasheet

Full PDF Text Transcription for RF2001T4S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RF2001T4S. For precise diagrams, and layout, please refer to the original PDF.

Data Sheet Fast recovery diode RF2001T4S Applications General rectification  Dimensions (Unit : mm) Features 1) High reliability. (TO-220) 10.0±0.3 0.1 4.5±0.3 ...

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it : mm) Features 1) High reliability. (TO-220) 10.0±0.3 0.1 4.5±0.3 0.1 2.8±0.2 0.1 for Structure (1) (2) (3) 2) Low noise. 3) Very fast switching . d Construction mendigens Silicon epitaxial planar 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 0.2 8.0 ① 1.2 1.3 0.8 (1) (2) (3) ROHM : TO220FN ① Manufacture Date 0.7±0.1 0.05 2.6±0.

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