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RDX080N50
Transistors
10V Drive Nch MOS FET
RDX080N50
zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm)
TO-220FM
10.0
φ3.2
4.5 2.8
14.0
zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Excellent resistance to damage from static electricity.
(1)Gate
15.0
12.0
8.0
2.5
1.3
1.2
0.8 2.54
(1) (2) (3)
2.54
0.75
2.
RDX080N50 Datasheet
