1) Glass sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF. (VF=0.45V Typ. at 100mA)
φ0.4±0.1
C 29±1 2.7±0.3 29±1
A φ1.8±0.2
!Construction Silicon epitaxial planar
ROHM : MSD EIAJ :.
JEDEC : DO-34
Product identification number “S3” is stamped on body of main unit. !Absolute maximum ratings (Ta = 25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temper.
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RB441Q-40
Diodes
Schottky barrier diode
RB441Q-40
!Applications Low current rectification !External dimensions (Units : mm)
CATHODE BAND (BLACK)
!Features 1) Glass sealed envelope for high reliability. (MSD) 2) Small pitch enables insertion on PCBs. 3) Low VF.(VF=0.45V Typ. at 100mA)
φ0.4±0.1
C 29±1 2.7±0.3 29±1
A φ1.8±0.2
!Construction Silicon epitaxial planar
ROHM : MSD EIAJ : − JEDEC : DO-34
Product identification number “S3” is stamped on body of main unit.
!Absolute maximum ratings (Ta = 25°C)
Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 0.