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RB061US-30 - Schottky Barrier Diode

Features

  • 1)Small power mold type. (TSMD8) 2)Low VF 3)High reliability.
  • TSMD8.
  • Structure Silicon epitaxial planer ROHM : TSMD8 Manufacture Date.
  • 1pin mark.
  • Structure (7) (6) (5) (8） （1） （2（ ）3） （4）.
  • Taping dimensions (Unit : mm) www. DataSheet. co. kr.
  • Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (.
  • 1) Io IFSM Forward current surge peak (60Hz1cyc) (.
  • 1) Junction tempera.

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Datasheet Details

Part number RB061US-30
Manufacturer ROHM
File Size 1.24 MB
Description Schottky Barrier Diode
Datasheet download datasheet RB061US-30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RB061US-30 Applications General rectification Dimensions (Unit : mm) Land size figure (Unit : mm) Features 1)Small power mold type. (TSMD8) 2)Low VF 3)High reliability ● TSMD8 Structure Silicon epitaxial planer ROHM : TSMD8 Manufacture Date ● 1pin mark Structure (7) (6) (5) (8） （1） （2（ ）3） （4） Taping dimensions (Unit : mm) www.DataSheet.co.kr Absolute maximum ratings (Ta=25°C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz1cyc) (*1) Junction temperature Tj Storage temperature Tstg (*1)Mounted on epoxy board.
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