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RB060M-60 - Schottky Barrier Diode

Features

  • power mold type. (PMDU) 2) Low IR. 1 for PMDU 3) High reliability. d.
  • Construction de Silicon epitaxial 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1.
  • Structure.
  • Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ11..5555±00.0.055 1.75±0.1 3.5±0.05 mmeensigns 1.81±0.1 o D.
  • Absolute maximum ratings (Ta = 25°C) c Parameter Symbol e Reverse voltage (repetitive) VRM w Reverse voltage (DC) VR R e Average rectified forward current (.
  • 1) Io t N.

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Datasheet Details

Part number RB060M-60
Manufacturer ROHM
File Size 837.55 KB
Description Schottky Barrier Diode
Datasheet download datasheet RB060M-60 Datasheet

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Full PDF Text Transcription

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Schottky Barrier Diode RB060M-60 Application General rectification Dimensions (Unit : mm) 1.6±0.1 0.1±0.1 　　　 0.05 Datasheet Land size figure (Unit : mm) 1.2 2.6±0.1 3.5±0.0.212 0.85 3.05 Features 1) Small power mold type. (PMDU) 2) Low IR. 1 for PMDU 3) High reliability. d Construction de Silicon epitaxial 0.9±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date 0.8±0.1 Structure Taping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φ11..5555±00.0.055 1.75±0.1 3.5±0.05 mmeensigns 1.81±0.1 o D Absolute maximum ratings (Ta = 25°C) c Parameter Symbol e Reverse voltage (repetitive) VRM w Reverse voltage (DC) VR R e Average rectified forward current (*1) Io t N Forward current surge peak (60Hz·1cyc) IFSM o Junction temperature Tj NStorage temperature Tstg 4.
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