Datasheet4U Logo Datasheet4U.com

R5011FNX - Nch 500V 11A Power MOSFET

Features

  • 1) Fast reverse recovery time (trr). lInner circuit 2) Low on-resistance. 3) Fast switching speed. (1) Gate (2) Drain (3) Source 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple.
  • 1 Body Diode 6) Parallel use is easy. 7) Pb-free lead plating ; RoHS compliant lPackaging specifications Packaging Bulk Reel size (mm) - l.

📥 Download Datasheet

Datasheet preview – R5011FNX

Datasheet Details

Part number R5011FNX
Manufacturer ROHM
File Size 708.16 KB
Description Nch 500V 11A Power MOSFET
Datasheet download datasheet R5011FNX Datasheet
Additional preview pages of the R5011FNX datasheet.

📁 Similar Datasheet

  • R5011010 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5011015 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5011210 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5011215 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5011410 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5011415 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5011610 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5011615 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R501 - General Purpose Rectifier (Powerex Power Semiconductors)
  • R5010410 - General Purpose Rectifier (Powerex Power Semiconductors)
Other Datasheets by Rohm

Full PDF Text Transcription

Click to expand full text
R5011FNX Nch 500V 11A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 500V 0.52W 11A 50W lOutline TO-220FM (1)(2)(3) lFeatures 1) Fast reverse recovery time (trr). lInner circuit 2) Low on-resistance. 3) Fast switching speed. (1) Gate (2) Drain (3) Source 4) Gate-source voltage (VGSS) guaranteed to be 30V. 5) Drive circuits can be simple. *1 Body Diode 6) Parallel use is easy.
Published: |