1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor
!External dimensions (Units : mm)
4.5+.
00..21 1.6±0.1
1.5±0.1
0.5±0.1
4.0.
+00..35 2.5+.
00..21
ROHM : MPT3 E I A J : SC-62
1.0±0.3
(1) (2) (3)
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
0.4±0.
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
K1717. For precise diagrams, and layout, please refer to the original PDF.
Transistors Small switching (60V, 2A) 2SK1717 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actua...
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g. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 4.5+−00..21 1.6±0.1 1.5±0.1 0.5±0.1 4.0−+00..35 2.5+−00..21 ROHM : MPT3 E I A J : SC-62 1.0±0.3 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 Abbreviated symbol : KE 0.4−+00..
K1717 Datasheet
