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BU4S11 - Single 2-input NAND gate

Features

  • 1) Low current dissipation. 2) Super-mini mold package designed for surface mounting. 3) Wide range of operating power supply voltage. 4) Capable of driving two L-TTL inputs and one LS-TTL input directly.
  • Block diagram VDD 5 Y 4 1 A 2 B 3 VSS.
  • Absolute maximum ratings (Ta = 25°C) Parameter Power supply voltage Power dissipation Input current Operating temperature Storage temperature Input voltage Symbol VDD Pd IIN Topr Tstg VIN Limits VSS.
  • 0.3 ~ VSS + 18.

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Datasheet Details

Part number BU4S11
Manufacturer ROHM
File Size 39.33 KB
Description Single 2-input NAND gate
Datasheet download datasheet BU4S11 Datasheet

Full PDF Text Transcription

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Standard ICs Single 2-input NAND gate BU4S11 The BU4S11 is a dual-input positive logic NAND gate. This is an ultra-compact logic IC with one circuit of the BU4011B built into an SMP package. Features • 1) Low current dissipation. 2) Super-mini mold package designed for surface mounting. 3) Wide range of operating power supply voltage. 4) Capable of driving two L-TTL inputs and one LS-TTL input directly •Block diagram VDD 5 Y 4 1 A 2 B 3 VSS •Absolute maximum ratings (Ta = 25°C) Parameter Power supply voltage Power dissipation Input current Operating temperature Storage temperature Input voltage Symbol VDD Pd IIN Topr Tstg VIN Limits VSS – 0.3 ~ VSS + 18 170 ± 10 – 40 ~ + 85 – 55 ~ + 150 VSS – 0.3 ~ VDD + 0.
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