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BR24L08FVM-W - 10248 bit electrically erasable PROM

Features

  • 1) 1024 registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ. ) Read (5V) : 0.2mA (Typ. ) Standby (5V) : 0.1µA (Typ. ) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC. 8) Small package - - - DIP8 / SOP8 / SOP-J8 / SSOP-B8 / MSOP-8 9) High reliability EEPROM with Double-Cell structure. 10) Hig.

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Datasheet Details

Part number BR24L08FVM-W
Manufacturer ROHM
File Size 388.28 KB
Description 10248 bit electrically erasable PROM
Datasheet download datasheet BR24L08FVM-W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Memory ICs BR24L08-W / BR24L08F-W / BR24L08FJ-W BR24L08FV-W / BR24L08FVM-W 1024×8 bit electrically erasable PROM BR24L08-W / BR24L08F-W / BR24L08FJ-W / BR24L08FV-W / BR24L08FVM-W The BR24L08-W series is 2-wire (I2C BUS type) serial EEPROMs which are electrically programmable. ∗ I C BUS is a registered trademark of Philips. 2 zApplications General purpose zFeatures 1) 1024 registers × 8 bits serial architecture. 2) Single power supply (1.8V to 5.5V). 3) Two wire serial interface. 4) Self-timed write cycle with automatic erase. 5) 16byte Page Write mode. 6) Low power consumption. Write (5V) : 1.5mA (Typ.) Read (5V) : 0.2mA (Typ.) Standby (5V) : 0.1µA (Typ.) 7) DATA security Write protect feature (WP pin). Inhibit to WRITE at low VCC.
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