Datasheet4U Logo Datasheet4U.com

BD3805F - Sound Processor for Car Audio

Features

  • zExternal dimensions (Unit : mm) 1) Noise when switching, attenuation of fader and fader, and gain (middle bass and treble) can be reduced by soft switching circuit. . 13.6±0.2 2) Perfect due low current consumption (Typ.12mA) and energy saving 22 12 design due to Bi-CMOS process. 3) Available for Rear Entertainment System due to I2C BUS control that can use two ICs at maximum. 1 11 0.15±0.1 4) Noise occurred through tone pass can be reduced (5µ Vrms) DataSheet4U. com 5) External components reduce.

📥 Download Datasheet

Datasheet Details

Part number BD3805F
Manufacturer ROHM
File Size 215.91 KB
Description Sound Processor for Car Audio
Datasheet download datasheet BD3805F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BD380 PNP Epitaxial Silicon Transistor Fairchild Semiconductor
BD380 PNP Transistor INCHANGE
BD38-xx Single Phase Moulded Bridges 0.8 Amp ro 1.5 Amp Facon
BD301 NPN Transistor INCHANGE
BD301N 30 AMP BLOCK DIODES ShunYe

Other Datasheets by ROHM

Part Number Description
BD3801FS SCF built-in sound processor
BD3811K1 5.1ch Sound Processor
BD3812F 2ch Electronic Volume
BD3813KS 6-channel volume IC for 6.1-channel
BD3814FV 6ch Electronic Volume

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com BD3805F Audio ICS Sound processor for car audio BD3805F The BD3805F is a sound processor developed for car audio. High S/N and low distortion rate of parametric equalizer can be composed without an external capacitor. Pop noise when switching volume, fader, mute and tone gain can’t be heard due to the integrated soft switching circuit. zApplications Car audio, Mini component stereo, Micro component stereo, DVD, TV zFeatures zExternal dimensions (Unit : mm) 1) Noise when switching, attenuation of fader and fader, and gain (middle bass and treble) can be reduced by soft switching circuit.. 13.6±0.2 2) Perfect due low current consumption (Typ.12mA) and energy saving 22 12 design due to Bi-CMOS process.
Published: |