Datasheet4U Logo Datasheet4U.com

2SD2678 - Bipolar transistor

Key Features

  • 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 250mV at IC = 1.5A, IB = 30mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zStructure NPN epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XX zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol V.

📥 Download Datasheet

Datasheet Details

Part number 2SD2678
Manufacturer ROHM
File Size 121.75 KB
Description Bipolar transistor
Datasheet download datasheet 2SD2678 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor Sanyo Semicon Device
2SD2603 SILICON NPN TRANSISTOR FOSHAN BLUE ROCKET
2SD2604 Silicon NPN Transistor Toshiba Semiconductor
2SD2606 SILICON NPN DIFFUSED TYPE TRANSISTOR Panasonic
2SD261 Transistors ETC

Other Datasheets by ROHM

Part Number Description
2SD2670 Transistors
2SD2671 Transistors
2SD2672 Transistors
2SD2673 Transistors
2SD2674 Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SD2678 Transistors 3A / 12V Bipolar transistor 2SD2678 zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm) MPT3 4.5 1.6 0.5 1.5 zFeatures 1) Collector current is high. 2) Low collector-emitter saturation voltage. (VCE(sat) ≤ 250mV at IC = 1.5A, IB = 30mA) (1)Base (1) (2) (3) 1.0 2.5 4.0 0.4 0.4 1.5 0.5 1.5 3.0 0.4 zStructure NPN epitaxial planar silicon transistor (2)Collector (3)Emitter Abbreviated symbol : XX zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature DC Pulse Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 15 12 6 3 6 0.5 2 150 −55 to +150 ∗1 ∗2 ∗3 zPackaging specifications Unit V V www.