2SD1864 - Power Transistor

ROHM

Key Features

1) Low VCE(sat). VCE(sat) = 0.5V (Typ. ) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243.
Structure Epitaxial planar type NPN silicon transistor.
Dimensions (Unit : mm) 2SD1864 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base.
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-bas.

2SD1864 power transistor by ROHM - Datasheet Preview

Datasheet Details

Part number	2SD1864
Manufacturer	ROHM
File Size	136.69 KB
Description	Power Transistor
Datasheet	2SD1864 Datasheet

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Other Datasheets by ROHM

Part Number	Description
2SD1861	Power transistor
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2SD1866	Medium Power Transistor

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Power Transistor (50V, 3A) 2SD1864 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. Structure Epitaxial planar type NPN silicon transistor Dimensions (Unit : mm) 2SD1864 6.8±0.2 2.5±0.2 4.4±0.2 1.0 0.9 0.65Max. 14.5±0.5 0.5±0.1 (1) (2) (3) 2.54 2.54 1.05 0.45±0.1 ROHM : ATV (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current 3 A (DC) IC 4.5 A (Pulse) ∗1 Collector power dissipation PC 1 W ∗2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 Single pulse, PW=100ms ∗2 Printed circuit board, 1.