2SB1732 - Genera purpose Transistors

Product Overview

Rohm

Part number	2SB1732
Manufacturer	ROHM
File Size	91.19 KB
Description	Genera purpose Transistors
Datasheet	2SB1732 Datasheet
Additional preview pages of the 2SB1732 datasheet.

1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat) ≤.
200mV at IC =.
500mA / IB =.
25mA (1) (2) 0.65 0.65 1.3 2.0 zExternal dimensions (Unit : mm) (3) 0.2 1.7 0.2 2.1 0.17 0.3 0~0.1 0.77 0.85Max. 0.15Max. ROHM : TUMT3 Abbreviated symbol : EV (1)Base (2)Emitter (3)Collector zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector current.

📁 Similar Datasheet

2SB173 - Ge PNP Alloy Junction Transistor (ETC)
2SB1734 - Silicon PNP epitaxial planar type Transistor (Panasonic Semiconductor)
2SB1739 - / NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SB170 - Ge PNP Alloy Junction Transistor (ETC)
2SB1700 - PNP/NPN Epitaxial Planar Silicon Darlington Transistors (Sanyo Semicon Device)
2SB171 - Ge PNP Alloy Junction Transistor (ETC)
2SB172 - Ge PNP Alloy Junction Transistor (ETC)
2SB1721 - Silicon Power Transistors (NEC)

Other Datasheets by Rohm

Published: Oct 13, 2005 |