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2SAR514R - Midium Power Transistors

Datasheet Summary

Features

  • s 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max. ) (IC / IB= -300mA / -15mA) 2) High speed switching.
  • Structure PNP Silicon epitaxial planar transistor.

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Datasheet Details

Part number 2SAR514R
Manufacturer ROHM
File Size 375.68 KB
Description Midium Power Transistors
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Midium Power Transistors (-80V / -0.7A) 2SAR514R  Features 1) Low saturation voltage, typically VCE (sat) = -0.4V (Max.) (IC / IB= -300mA / -15mA) 2) High speed switching  Structure PNP Silicon epitaxial planar transistor  Applications Driver  Dimensions (Unit : mm) TSMT3 (3) (1) (1) Base (2) Emitter (3) Collector (2) Abbreviated symbol : MD  Packaging specifications Package Type Code TSMT3 TL Basic ordering unit (pieces) 3000  Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed Power dissipation Junction temperature Range of storage temperature VCBO VCEO VEBO IC ICP *1 PD *2 PD *3 Tj Tstg -80 -80 -6 -0.7 -1.4 0.5 1.
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