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TP70H150G4LSGB - 650V GaN FET

Product Overview

Renesas

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TP70H150G4LSGB 650V GaN FET by Renesas - Datasheet Preview — Datasheet preview – TP70H150G4LSGB

Datasheet Details

Part number	TP70H150G4LSGB
Manufacturer	Renesas
File Size	875.57 KB
Description	650V GaN FET
Datasheet	TP70H150G4LSGB Datasheet
Additional preview pages of the TP70H150G4LSGB datasheet.

Product details

Description

The TP70H150G4LSGB 700V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device using Renesas’ Gen IV platform.

Features

Gen IV technology.
JEDEC-qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Transient over-voltage capability.
Operation with E-mode Gate drivers without need for Zener protection.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging.
2 kV HBM ESD rating.

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Published: May 10, 2025 |