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RQJ0306FQDQS - Silicon P-Channel MOS FET

Features

  • Low gate drive VDSS :.
  • 30 V and 2.5 V gate drive.
  • Low drive current.
  • High speed switching.
  • Small traditional power package (UPAK) Outline.

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Full PDF Text Transcription

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RQJ0306FQDQS Silicon P Channel MOS FET Power Switching Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "FQ". Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation Thermal resistance VDSS VGSS ID ID(pulse) Note1 IDR Pch Note2 Rth(ch-a) Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, Duty cycle ≤ 1% 2. When using the glass epoxy board (FR-4 40 × 40 × 1 mm) REJ03G1780-0100 Rev.1.00 Mar 16, 2009 2, 4 D 1. Gate 2. Drain 3. Source 4.
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