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RKP202KN - Silicon Epitaxial Trench Pin Diode

Features

  • Adopting the trench structure improves low capacitance. (C = 0.43 pF max).
  • Low forward resistance. (rf = 1.80 Ω max).
  • Low operation current.
  • Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and products. Ordering Information Type No. RKP202KN Laser Mark 5 Package Name MP8 Package Code (Previous Code) PXSN0002ZA-A Pin Arrangement 5 Cathode mark Mark 12 1. Cathode 2. Anode Rev.1.00 Dec 16, 2005.

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Datasheet Details

Part number RKP202KN
Manufacturer Renesas
File Size 140.53 KB
Description Silicon Epitaxial Trench Pin Diode
Datasheet download datasheet RKP202KN Datasheet

Full PDF Text Transcription

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RKP202KN Silicon Epitaxial Trench Pin Diode for Antenna Switching REJ03G1312-0100 Rev.1.00 Dec 16, 2005 Features • Adopting the trench structure improves low capacitance. (C = 0.43 pF max) • Low forward resistance. (rf = 1.80 Ω max) • Low operation current. • Ultra small leadless Package (0805type; the use of an undersurface electrode structure) for use in compact and products. Ordering Information Type No. RKP202KN Laser Mark 5 Package Name MP8 Package Code (Previous Code) PXSN0002ZA-A Pin Arrangement 5 Cathode mark Mark 12 1. Cathode 2. Anode Rev.1.
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