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RJP65S05DWT - IGBT

Download the RJP65S05DWT datasheet PDF. This datasheet also covers the RJP65S05DWA variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Description

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Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C).
  • High speed Switching.
  • Short circuit withstands time (10 s min. ) R07DS0822EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S05DWT-80 2 C 3 Wafer: RJP65S05DWA-80 2 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www. DataSheet. net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RJP65S05DWA_Renesas.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Datasheet RJP65S05DWT/RJP65S05DWA 650V - 75A - IGBT Application: Inverter Features  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25C)  High speed Switching  Short circuit withstands time (10 s min.) R07DS0822EJ0001 Rev.0.01 Jul 05, 2012 Outline Die: RJP65S05DWT-80 2 C 3 Wafer: RJP65S05DWA-80 2 1G 1 3 1. Gate 2. Collector (The back) 3. Emitter E 3 3 www.DataSheet.net/ Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Junction temperature Symbol VCES VGES IC Note1 IC Note1 Tj Ratings 650 ±30 150 75 150 Unit V V A A C Notes: 1. This data is a regulated value in evaluation Package. R07DS0822EJ0001 Rev.0.
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