Datasheet4U Logo Datasheet4U.com

RJP63F3DPP-M0 - N-Channel IGBT

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011 Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJP6085DPK Silicon N-Channel IGBT Renesas Technology
RJP6085DPN Silicon N-Channel IGBT Renesas Technology
RJP60D0DPP-M0 Silicon N-Channel IGBT Renesas Technology
RJP020N06 Drive Nch MOS FET Rohm
RJP020N06FRA Power MOSFET ROHM

Other Datasheets by Renesas

Part Number Description
RJP63F3 N-Channel IGBT
RJP63F3A N-Channel IGBT
RJP63K2DPK-M0 N-Channel IGBT
RJP63K2DPP-M0 N-Channel IGBT
RJP6065DPM N-Channel IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Preliminary Datasheet RJP63F3DPP-M0 Silicon N Channel IGBT High Speed Power Switching Features • • • • • Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL R07DS0321EJ0200 Rev.2.00 May 26, 2011 Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 E www.DataSheet.co.kr Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.
Published: |