RJK6026DPE Datasheet PDF (Silicon N-Channel MOSFET)

Datasheet Details

Part number	RJK6026DPE
Manufacturer	Renesas
File Size	94.79 KB
Description	Silicon N-Channel MOSFET
Datasheet	RJK6026DPE Datasheet
Additional preview pages of the RJK6026DPE datasheet.

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Full PDF Text Transcription

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RJK6026DPE Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) 4 123 G Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg REJ03G1479-0100 Rev.1.00 Jul 02, 2009 D 1.

Published: Oct 3, 2015 |