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RJK6024DPE - N-Channel Power MOSFET

Description

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Features

  • Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C).
  • Low leakage current.
  • High speed switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Outline.

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Datasheet Details

Part number RJK6024DPE
Manufacturer Renesas
File Size 141.25 KB
Description N-Channel Power MOSFET
Datasheet download datasheet RJK6024DPE Datasheet
Additional preview pages of the RJK6024DPE datasheet.

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Full PDF Text Transcription

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Preliminary Datasheet RJK6024DPE 600V - 0.4A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 28  typ. (at ID = 0.2 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching R07DS0424EJ0200 Rev.2.00 Feb 27, 2012 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tc = 25C www.DataSheet.co.
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