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RJK6012DPP-A0 - High Speed Power Switching MOSFET

Datasheet Summary

Features

  • Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C).
  • Low leakage current.
  • High speed switching.
  • Quality grade: Standard Outline.

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Datasheet Details

Part number RJK6012DPP-A0
Manufacturer Renesas
File Size 151.48 KB
Description High Speed Power Switching MOSFET
Datasheet download datasheet RJK6012DPP-A0 Datasheet
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Full PDF Text Transcription

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RJK6012DPP-A0 600V - 10A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.77  typ. (at ID = 5 A, VGS = 10 V, Ta = 25 C)  Low leakage current  High speed switching  Quality grade: Standard Outline RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA) D 12 3 G S Datasheet R07DS1420EJ0102 Rev.1.02 Nov.15.2019 1. Gate 2. Drain 3. Source Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 600 V Gate to source voltage VGSS 30 V Drain current ID Note4 10 A Drain peak current ID (pulse)Note1 20 A Body-drain diode reverse drain current IDR 10 A Body-drain diode reverse drain peak current IDR (pulse) Note1 20 A Avalanche current IAP Note3 3 A Avalanche energy EAR Note3 0.
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