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RJK6011DJA - High Speed Power Switching MOS FET

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Description

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Features

  • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C).
  • Low drive current.
  • High density mounting Outline.

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Datasheet Details

Part number RJK6011DJA
Manufacturer Renesas
File Size 131.50 KB
Description High Speed Power Switching MOS FET
Datasheet download datasheet RJK6011DJA Datasheet
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Full PDF Text Transcription

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RJK6011DJA 600V - 0.1A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 35 Ω typ. (at ID = 0.05 A, VGS = 10 V, Ta = 25°C) • Low drive current • High density mounting Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92(1)) G 321 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% Symbol VDSS VGSS ID ID Note1 (pulse) IDR IDR Note1 (pulse) Pch θch-a Tch Tstg Preliminary Datasheet R07DS0873EJ0200 Rev.2.00 Jan 28, 2014 D 1. Source 2. Drain 3. Gate S Ratings 600 ±30 0.
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