• Part: RJK0822SPN
  • Description: Silicon N Channel Power MOS FET
  • Manufacturer: Renesas
  • Size: 265.36 KB
Download RJK0822SPN Datasheet PDF
Renesas
RJK0822SPN
Features - Low on-resistance RDS(on) = 7.9mΩ typ.(at VGS = 10V) - High speed switching - Low drive current - Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline Rev.1.00 September.26.2007 Note: This product is designed for Electric Bike (E-Bike) application in China market. Rev.1.00, September.26.2007, page 1 of 7 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VGSS ID ID(pulse)Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C Ratings 80 ±20 80 320 80 100 150 - 55 to +150 Unit V V A A A W °C °C Rev.1.00, September.26.2007, page 2 of 7 Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage V(BR)DSS 80 Gate to source leak current Zero gate voltage drain current...