Datasheet4U Logo Datasheet4U.com

RJJ0621DPP-E0 - P Channel Power MOS FET

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

  • VDSS :.
  • 60 V.
  • RDS(on) : 56 m (MAX).
  • ID :.
  • 25 A.
  • Lead Mount Type (TO-220FP) Outline.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RJJ03G0292_HRV103A Silicon Schottky Barrier Diode ETC

Other Datasheets by Renesas

Part Number Description
RJJ0621DPP P Channel Power MOS FET
RJJ0315DPA P Channel Power MOS FET

Full PDF Text Transcription

Click to expand full text
RJJ0621DPP-E0 P Channel Power MOS FET High Speed Switching Features  VDSS : –60 V  RDS(on) : 56 m (MAX)  ID : –25 A  Lead Mount Type (TO-220FP) Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 23 G1 Preliminary Datasheet R07DS0797EJ0100 Rev.1.00 Jun 08, 2012 S 3 1. Gate 2. Drain 3. Source 2 D Application  DC-DC converter, Motor control, Solenoid control, etc. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current (DC) Drain current (Pulsed)*1 ID ID(pulse) Avalanche current IAP Channel dissipation Channel to case thermal impedance Pch ch-c Channel temperature Tch Storage temperature Tstg Note: 1. Pulse width limited by safe operating area. Ratings –60 +10/–20 –25 –50 –25 25 5.
Published: |