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RJH60V1BDPP-M0 - IGBT

Features

  • Short circuit withstand time (6 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode (25 ns typ. ) in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0759EJ0100 Rev.1.00 May 25, 2011 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJH60V1BDPP-M0 600V - 8A - IGBT Application: Inverter Features  Short circuit withstand time (6 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 8 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (25 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 8 A, Rg = 5 , inductive load) R07DS0759EJ0100 Rev.1.00 May 25, 2011 Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) C G 1. Gate 2. Collector 3. Emitter 1 2 3 www.DataSheet.
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