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RJH1CV7DPQ-E0 - IGBT

Description

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Features

  • Short circuit withstand time (5 s typ. ).
  • Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C).
  • Built-in fast recovery diode (trr = 200 ns typ. ) in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0525EJ0400 Rev.4.00 Jan 19, 2012 Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary Datasheet RJH1CV7DPQ-E0 1200V - 35A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 35 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 200 ns typ.) in one package  Trench gate and thin wafer technology  High speed switching tf = 200 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 35 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0525EJ0400 Rev.4.00 Jan 19, 2012 Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) C 4 G 1. Gate 2. Collector 3. Emitter 4. Collector E 1 2 3 www.DataSheet.
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