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Preliminary Datasheet
RJG0601JSP
±60V, ±1.5A, N Channel, P Channel Thermal FET Power Switching
R07DS1213EJ0200 Rev.2.00
Nov 01, 2016
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
Built-in the over temperature shut-down circuit. High endurance capability against to the short circuit. Latch type shut down operation (need 0 voltage recovery). Built-in the current limitation circuit. High density mounting Power supply voltage applies 12 V.