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RJF0610JSP - N-Channel MOSFET

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Features

  • Logic level operation (5 to 6 V Gate drive).
  • Built-in the over temperature shut-down circuit.
  • High endurance capability against to the short circuit.
  • Temperature hysteresis type.
  • High density mounting.
  • Power supply voltage applies 12 V and 24 V.
  • AEC-Q101 Compliant Outline.

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Datasheet Details

Part number RJF0610JSP
Manufacturer Renesas
File Size 92.79 KB
Description N-Channel MOSFET
Datasheet download datasheet RJF0610JSP Datasheet
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Target Specifications Datasheet RJF0610JSP Silicon N Channel MOS FET Series Power Switching R07DS0568EJ0200 Rev.2.00 Apr 16, 2012 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  Logic level operation (5 to 6 V Gate drive).  Built-in the over temperature shut-down circuit.  High endurance capability against to the short circuit.  Temperature hysteresis type.  High density mounting  Power supply voltage applies 12 V and 24 V.
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