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RBA200N15YANS-3UA03
REXFET-1 N-Channel Power MOSFET 150 V - 200 A - 3.4 mΩ - TOLL for Automotive
Datasheet
Description
The RBA200N15YANS-3UA03 N-channel power MOSFET features REXFET-1 split-gate technology and is offered in a TOLL package. The TOLL package features top-side cooling for ultra-compact and optimal thermal performance. Renesas' REXFET-1 split gate technology is suitable for applications requiring low RDS(on) and switching capability for high-power and high-frequency applications.
Features
Standard level gate drive voltage: VGS(th) = 2.2 to 3.7 V Super low on-state resistance: RDS(on) = 3.4 m MAX.