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R1QLA4436RBG - 144-Mbit DDRII+ SRAM 2-word Burst Architecture

Description

The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.

It integrates unique synchronous peripheral circuitry and a burst counter.

Features

  • Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
  • Clock z z z z Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart.
  • I/O z z z z z z Common data input/output bus Pipelined double data rate operation HSTL I/O User programmable output impedance PLL circuitry for wide o.

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Datasheet Details

Part number R1QLA4436RBG
Manufacturer Renesas
File Size 947.74 KB
Description 144-Mbit DDRII+ SRAM 2-word Burst Architecture
Datasheet download datasheet R1QLA4436RBG Datasheet

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Datasheet R1QLA4436RBG, R1QLA4418RBG 144-Mbit DDR™II+ SRAM 2-word Burst Architecture (2.0 Cycle Read latency) with ODT R10DS0144EJ0200 Rev.2.00 Aug 01, 2014 Description The R1QLA4436RBG is a 4,194,304-word by 36-bit and the R1QLA4418RBG is a 8,388,608-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package.
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