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R1LV0816ASB-5SI - 8Mb Advanced LPSRAM

Description

The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.

Features

  • Single 2.4-3.6V power supply.
  • Small stand-by current: 1.2μA (Vcc=3.0V, typ. ).
  • No clocks, No refresh.
  • All inputs and outputs are TTL compatible.
  • Easy memory expansion by CS#, LB# and UB#.
  • Common Data I/O.
  • Three-state outputs: OR-tie capability.
  • OE# prevents data contention in the I/O bus.
  • Operation temperature: -40 ~ +85°C Ordering information Type No. R1LV0816ASB-5SI R1LV0816ASB-7SI Power supply 2.7V to 3.6V 2.4.

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R1LV0816ASB – 5SI, 7SI 8Mb Advanced LPSRAM (512k word x 16bit) REJ03C0387-0100 Rev.1.00 2009.12.07 Description The R1LV0816ASB is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit, fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV0816ASB is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives. The R1LV0816ASB is packaged in a 44pin thin small outline mount device [11.76mm×18.41mm 44-pin plastic TSOP (II)]. It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards. Features • Single 2.4-3.6V power supply • Small stand-by current: 1.2μA (Vcc=3.0V, typ.
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