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NP80N06DLD - N-CHANNEL POWER MOS FET

Download the NP80N06DLD datasheet PDF. This datasheet also covers the NP80N06CLD variant, as both devices belong to the same n-channel power mos fet family and are provided as variant models within a single manufacturer datasheet.

Description

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Channel Temperature 175 degree rated.
  • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX. ) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX. ) (VGS = 5 V, ID = 40 A).
  • Low Ciss : Ciss = 2360 pF (TYP. ).
  • Built-in Gate protection diode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (NP80N06CLD-Renesas.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
NP80N06MLG MOSFET NEC
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NP80N06PLG MOSFET NEC
NP80N03CDE SWITCHING N-CHANNEL POWER MOSFET NEC
NP80N03CLE SWITCHING N-CHANNEL POWER MOS FET NEC

Other Datasheets by Renesas

Part Number Description
NP80N06CLD N-CHANNEL POWER MOS FET
NP80N06ELD N-CHANNEL POWER MOS FET
NP80N04MDG N-CHANNEL POWER MOS FET
NP80N04MLG N-CHANNEL POWER MOS FET
NP80N04NDG N-CHANNEL POWER MOS FET

Full PDF Text Transcription

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PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP80N06CLD,NP80N06DLD,NP80N06ELD SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Channel Temperature 175 degree rated • Super Low On-state Resistance RDS(on)1 = 13 mΩ (MAX.) (VGS = 10 V, ID = 40 A) RDS(on)2 = 17 mΩ (MAX.) (VGS = 5 V, ID = 40 A) • Low Ciss : Ciss = 2360 pF (TYP.
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