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NP80N04PUG - N-CHANNEL POWER MOS FET

This page provides the datasheet information for the NP80N04PUG, a member of the NP80N04NUG N-CHANNEL POWER MOS FET family.

Datasheet Summary

Description

The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Non logic level.
  • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A).
  • High current rating ID(DC) = ±80 A.
  • Low input capacitance Ciss = 4900 pF TYP.
  • Designed for automotive.

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Datasheet preview – NP80N04PUG

Datasheet Details

Part number NP80N04PUG
Manufacturer Renesas
File Size 271.34 KB
Description N-CHANNEL POWER MOS FET
Datasheet download datasheet NP80N04PUG Datasheet
Additional preview pages of the NP80N04PUG datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP80N04NUG, NP80N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP80N04NUG-S18-AY Note NP80N04PUG-E1B-AY Note NP80N04PUG-E2B-AY Note Pure Sn (Tin) Tube 50 p/tube Tape 1000 p/reel Note Pb-free (This product does not contain Pb in the external electrode.) PACKAGE TO-262 (MP-25SK) typ. 1.8 g TO-263 (MP-25ZP) typ. 1.5 g FEATURES • Non logic level • Super low on-state resistance - NP80N04NUG RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A) - NP80N04PUG RDS(on) = 4.5 mΩ MAX.
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