Click to expand full text
NP45N06VDK
60 V – 45 A – N-channel Power MOS FET Application: Automotive
Data Sheet
R07DS1295EJ0200 Rev.2.00
May 24, 2018
Description
NP45N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on)1 = 11.6 m MAX. (VGS = 10 V, ID = 23 A)
Low Ciss: Ciss = 1530 pF TYP. (VDS = 25 V) Designed for automotive application and AEC-Q101 qualified
Outline
TO-252(MP-3ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP45N06VDK Datasheet
