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NP40N10YDF - N-channel Power MOS FET

Datasheet Summary

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF).
  • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V).
  • Logic level drive type.
  • Designed for automotive.

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Datasheet Details

Part number NP40N10YDF
Manufacturer Renesas
File Size 158.26 KB
Description N-channel Power MOS FET
Datasheet download datasheet NP40N10YDF Datasheet
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Preliminary Data Sheet NP40N10YDF, NP40N10VDF, NP40N10PDF 100 V – 40 A – N-channel Power MOS FET Application: Automotive R07DS0361EJ0201 Rev.2.01 May 13, 2013 Description These products are N-channel MOS Field Effect Transistors designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10YDF) ⎯ RDS(on) = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10VDF) ⎯ RDS(on) = 27 mΩ MAX. (VGS = 10 V, ID = 20 A) (NP40N10PDF) • Low Ciss: Ciss = 2100 pF TYP. (VDS = 25 V, VGS = 0 V) • Logic level drive type • Designed for automotive application and AEC-Q101 qualified Outline Drain Gate Body Diode Source 8-pin HSON 87 6 5 TO-252 4 TO-263 4 2 34 1 2 3 1 2 3 1 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain 1. Gate 2.
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