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NP40N055DLE - MOS FIELD EFFECT TRANSISTOR

This page provides the datasheet information for the NP40N055DLE, a member of the NP40N055ELE MOS FIELD EFFECT TRANSISTOR family.

Datasheet Summary

Description

These products are N-channel MOS Field Effect Transistors designed for high current switching applications.

Features

  • Channel temperature 175 degree rated.
  • Super low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 5.0 V, ID = 20 A) RDS(on)3 = 32 mΩ MAX. (VGS = 4.5 V, ID = 20 A).
  • Low input capacitance Ciss = 1300 pF TYP.
  • Built-in gate protection diode (TO-262) (TO-263) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all produ.

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Datasheet Details

Part number NP40N055DLE
Manufacturer Renesas
File Size 326.19 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP40N055DLE Datasheet
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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP40N055ELE, NP40N055KLE NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP40N055ELE-E1-AY Note1, 2 NP40N055ELE-E2-AY Note1, 2 NP40N055KLE-E1-AY Note1 NP40N055KLE-E2-AY Note1 NP40N055CLE-S12-AZ Note1, 2 NP40N055DLE-S12-AY Note1, 2 NP40N055MLE-S18-AY Note1 NP40N055NLE-S18-AY Note1 LEAD PLATING Pure Sn (Tin) Sn-Ag-Cu Pure Sn (Tin) PACKING Tape 800 p/reel Tube 50 p/tube Notes 1. Pb-free (This product does not contain Pb in the external electrode.) 2. Not for new design PACKAGE TO-263 (MP-25ZJ) typ. 1.4 g TO-263 (MP-25ZK) typ. 1.5 g TO-220 (MP-25) typ. 1.
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