NP120N04NUK
Description
The NP120N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
- Super low on-state resistance RDS(on) = 1.95 mΩ MAX. (VGS = 10 V, ID = 60 A)
- Low Ciss: Ciss = 8300 p F TYP. (VDS = 25 V)
- Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP120N04NUK-S18-AY
- 1 Pure Sn (Tin)
Tube 50 p/tube
Note:
- 1 Pb-free (This product does not contain Pb in the external electrode)
Package TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C) Drain Current (pulse)
- 1
ID(DC) ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature Repetitive Avalanche Current
- 2 Repetitive Avalanche Energy
- 2
Tstg IAR EAR
Notes:
- 1 TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
- 2...
