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N6006NZ - N-channel MOSFET

Datasheet Summary

Description

The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A).
  • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V).
  • High current ID(DC) = ±6.0 A.
  • RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Plating Pure Sn (Tin) Tube Packing 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode. ) Package Isolated TO-220 1.95g TYP. Absolute Maximum Ratings (TA = 25°C, all terminals are conne.

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Datasheet Details

Part number N6006NZ
Manufacturer Renesas
File Size 254.57 KB
Description N-channel MOSFET
Datasheet download datasheet N6006NZ Datasheet
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    Data Sheet N6006NZ N-channel MOSFET 600V, 6A, 1.2Ω R07DS1020EC0100 Rev.1.00 Feb 18, 2013 Description The N6006NZ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 1.2Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low input capacitance Ciss = 1385pF TYP. (VDS = 10V, VGS = 0 V) • High current ID(DC) = ±6.0 A • RoHS Compliant Ordering Information Part No. N6006NZ-S17-AY ∗1 Lead Plating Pure Sn (Tin) Tube Packing 50 p/tube Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Package Isolated TO-220 1.95g TYP.
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